Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz
Abstract
We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future receiverless communication. (C) 2020 The Author(s)
Publication status
publishedExternal links
Book title
Optical Fiber Communication Conference (OFC) 2020Journal / series
OSA Technical DigestPages / Article No.
Publisher
Optical Society of AmericaEvent
Organisational unit
08837 - Schenk, Andreas (Tit.-Prof.)
03925 - Luisier, Mathieu / Luisier, Mathieu
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