Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
SubjectAluminium compounds; Avalanche breakdown; Avalanche diodes; Boltzmann equation; Gallium arsenide; III-V semiconductors; Indium compounds; Monte Carlo methods; Semiconductor device breakdown; Semiconductor device models
NotesReceived 21 March 2012, Accepted 12 April 2012, Published online 24 May 2012.
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