Tensile strained Ge quantum wells on Si substrate
Post-growth annealing versus low temperature re-growth
Metadata only
Date
2012-06Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Materials Science and Engineering: BVolume
Pages / Article No.
Publisher
ElsevierSubject
Germanium; Silicon-germanium; Multiple quantum well; Tensile strain; CMOSOrganisational unit
03692 - Spolenak, Ralph / Spolenak, Ralph
Notes
Received 22 June 2011, Revised 25 September 2011, Accepted 31 October 2011.More
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ETH Bibliography
yes
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