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dc.contributor.author
Zhang, Ziyang
dc.contributor.author
Oehler, Andreas E.H.
dc.contributor.author
Resan, Bojan
dc.contributor.author
Kurmulis, Sarah
dc.contributor.author
Zhou, Kejia J.
dc.contributor.author
Wang, Qi
dc.contributor.author
Mangold, Mario
dc.contributor.author
Südmeyer, Thomas
dc.contributor.author
Keller, Ursula
dc.contributor.author
Weingarten, Kurt J.
dc.contributor.author
Hogg, Richard A.
dc.date.accessioned
2018-06-14T14:01:43Z
dc.date.available
2017-06-10T02:06:25Z
dc.date.available
2018-06-14T14:01:43Z
dc.date.issued
2012-06-28
dc.identifier.issn
2045-2322
dc.identifier.other
10.1038/srep00477
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/51334
dc.identifier.doi
10.3929/ethz-b-000051334
dc.description.abstract
High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Nature Publishing Group
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-sa/3.0/
dc.title
1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported
ethz.journal.title
Scientific Reports
ethz.journal.volume
2
en_US
ethz.journal.abbreviated
Sci Rep
ethz.pages.start
477
en_US
ethz.size
5 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.nebis
006751867
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
ethz.date.deposited
2017-06-10T02:06:28Z
ethz.source
ECIT
ethz.identifier.importid
imp59364f66b6a4146632
ethz.ecitpid
pub:83794
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-12T18:04:07Z
ethz.rosetta.lastUpdated
2020-02-15T13:32:52Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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