>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

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Author
Moor, Davidcc
Winiger, Joel
Ma, Pingcc
Messner, Andreascc
Bitachon, Bertold Iancc
Abel, Stefan
Eltes, Felix
Fompeyrine, Jean
Leuthold, Juergcc
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Date
2021
Type
    Conference Paper
Abstract
A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.
Permanent link
https://doi.org/10.3929/ethz-b-000526098
Publication status
published
External links
Editor
Mazzali, Claudio
Poon, Ting-Chung
Averitt, Richard D.
Kaindl, Robert A.
Book title
Frontiers in Optics + Laser Science 2021
Pages / Article No.
FTh4D.2
Publisher
Optica Publishing Group
Event
Frontiers in Optics 2021, Washington, DC, USA, November 1–4 , 2021
Subject
Ferroelectric modulator; plasmonic modulator; Optics and photonics
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg  
Funding
780997 - Wafer-scale, CMOS integration of photonics, plasmonics and electronics for mass manufacturing 200Gb/s NRZ transceivers towards low-cost Terabit connectivity in Data Centers (EC)
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