>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

Download
Full text (accepted version) (PDF, 438.7Kb)
Thumbnail
Open access
Author
Moor, Davidcc
Winiger, Joel
Ma, Pingcc
Messner, Andreascc
Bitachon, Bertold Iancc
Abel, Stefan
Eltes, Felix
Fompeyrine, Jean
Leuthold, Juergcc
Show all
Date
2021
Type
    Conference Paper
Rights / license
In Copyright - Non-Commercial Use Permitted
Abstract
A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.
Permanent link
https://doi.org/10.3929/ethz-b-000526098
Publication status
published
External links
Editor
Mazzali, Claudio
Poon, Ting-Chung
Averitt, Richard D.
Kaindl, Robert A.
Book title
Frontiers in Optics + Laser Science 2021
Pages / Article No.
FTh4D.2
Publisher
Optica Publishing Group
Event
Frontiers in Optics 2021, Washington, DC, USA, November 1–4 , 2021
Subject
Ferroelectric modulator; plasmonic modulator; Optics and photonics
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg  
02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory
Funding
780997 - Wafer-scale, CMOS integration of photonics, plasmonics and electronics for mass manufacturing 200Gb/s NRZ transceivers towards low-cost Terabit connectivity in Data Centers (EC)
More
Show all metadata
ETH Bibliography
yes
Altmetrics