>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration
Abstract
A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.
Permanent link
https://doi.org/10.3929/ethz-b-000526098Publication status
publishedExternal links
Book title
Frontiers in Optics + Laser Science 2021Pages / Article No.
Publisher
Optica Publishing GroupEvent
Subject
Ferroelectric modulator; plasmonic modulator; Optics and photonicsOrganisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory
Funding
780997 - Wafer-scale, CMOS integration of photonics, plasmonics and electronics for mass manufacturing 200Gb/s NRZ transceivers towards low-cost Terabit connectivity in Data Centers (EC)
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