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dc.contributor.author
Aggeler, Daniel
dc.contributor.author
Biela, Jürgen
dc.contributor.author
Inoue, Shigenori
dc.contributor.author
Akagi, Hirofumi
dc.contributor.author
Kolar, Johann W.
dc.date.accessioned
2021-07-30T13:15:05Z
dc.date.available
2017-06-08T16:57:14Z
dc.date.available
2021-07-30T13:15:05Z
dc.date.issued
2007
dc.identifier.isbn
1-4244-0844-X
en_US
dc.identifier.isbn
1-424-40843-1
en_US
dc.identifier.other
10.1109/PCCON.2007.373015
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/5272
dc.description.abstract
In this paper two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs. In the comparison also the high frequency, high voltage transformer, which ensures galvanic isolation and which is a core element of the DC-DC converter, is examined in detail by analytic calculations and FEM simulations. For validating the analytical considerations a 20kW SiC DC-DC converter has been designed in detail. Measurement results for the switching and conduction losses have been acquired from the SiC and also for a Si system for calculating the losses of the scaled 1MW system.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Next-generation BTB system
en_US
dc.subject
High voltage HF DC-DC converter
en_US
dc.subject
SiC JFET cascode
en_US
dc.subject
High voltage HF transformer
en_US
dc.title
Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution - Comparison of Converters using Si and SiC Devices
en_US
dc.type
Conference Paper
dc.date.published
2007-06-18
ethz.book.title
2007 Power Conversion Conference Proceedings
en_US
ethz.pages.start
510
en_US
ethz.pages.end
517
en_US
ethz.event
4th Power Conversion Conference (PCC'07)
en_US
ethz.event.location
Nagoya, Japan
en_US
ethz.event.date
April 2-5, 2007
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03573 - Kolar, Johann W. / Kolar, Johann W.
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03573 - Kolar, Johann W. / Kolar, Johann W.
ethz.date.deposited
2017-06-08T16:57:46Z
ethz.source
ECIT
ethz.identifier.importid
imp59364b8a4084c16426
ethz.ecitpid
pub:15532
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
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ethz.rosetta.installDate
2017-07-17T08:46:43Z
ethz.rosetta.lastUpdated
2023-02-06T22:18:02Z
ethz.rosetta.versionExported
true
ethz.COinS
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