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dc.contributor.author
Mundy, Julia A.
dc.contributor.author
Grosso, Bastien Francesco
dc.contributor.author
Heikes, Colin A.
dc.contributor.author
Ferenc Segedin, Dan
dc.contributor.author
Wang, Zhe
dc.contributor.author
Shao, Yu-Tsun
dc.contributor.author
Dai, Cheng
dc.contributor.author
Goodge, Berit H.
dc.contributor.author
Meier, Quintin N.
dc.contributor.author
Nelson, Christopher T.
dc.contributor.author
Prasad, Bhagwati
dc.contributor.author
Xue, Fei
dc.contributor.author
Ganschow, Steffen
dc.contributor.author
Muller, David A.
dc.contributor.author
Kourkoutis, Lena F.
dc.contributor.author
Chen, Long-Qing
dc.contributor.author
Ratcliff, William D.
dc.contributor.author
Spaldin, Nicola A.
dc.contributor.author
Ramesh, Rammamoorthy
dc.contributor.author
Schlom, Darrell G.
dc.date.accessioned
2022-07-11T09:44:01Z
dc.date.available
2022-02-11T05:05:32Z
dc.date.available
2022-07-11T09:42:37Z
dc.date.available
2022-07-11T09:44:01Z
dc.date.issued
2022-02-04
dc.identifier.issn
2375-2548
dc.identifier.other
10.1126/sciadv.abg5860
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/532092
dc.identifier.doi
10.3929/ethz-b-000532092
dc.description.abstract
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
AAAS
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc/4.0/
dc.title
Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial 4.0 International
dc.date.published
2022-02-02
ethz.journal.title
Science Advances
ethz.journal.volume
8
en_US
ethz.journal.issue
5
en_US
ethz.journal.abbreviated
Sci Adv
ethz.pages.start
eabg5860
en_US
ethz.size
11 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Washington, DC
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03903 - Spaldin, Nicola A. / Spaldin, Nicola A.
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03903 - Spaldin, Nicola A. / Spaldin, Nicola A.
ethz.date.deposited
2022-02-11T05:05:43Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2022-07-11T09:44:07Z
ethz.rosetta.lastUpdated
2023-02-07T04:10:25Z
ethz.rosetta.versionExported
true
ethz.COinS
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