InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz
dc.contributor.author
Arabhavi, Akshay M.
dc.contributor.author
Ciabattini, Filippo
dc.contributor.author
Hamzeloui, Sara
dc.contributor.author
Flückiger, Ralf
dc.contributor.author
Saranovac, Tamara
dc.contributor.author
Han, Daxin
dc.contributor.author
Marti, Diego
dc.contributor.author
Bonomo, Giorgio
dc.contributor.author
Chaudhary, Rimjhim
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2022-04-22T09:36:45Z
dc.date.available
2022-04-18T03:29:08Z
dc.date.available
2022-04-22T09:36:45Z
dc.date.issued
2022-04
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2021.3138379
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/542564
dc.identifier.doi
10.3929/ethz-b-000542564
dc.description.abstract
We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record fMAX =1.2 THz, a simultaneous fT =475 GHz, and BVCEO} =5.4 V. The resulting BVCEO × fMAX =6.48 THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base-emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base-collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with fMAX ≥1 THz are demonstrated with emitter lengths as long as 9.4 μm and areas as high as 1.645 μm 2. Such an area is > 6× larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter- A nd submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/μm 2 or 1.17 mW/μm of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2022-01-06
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
69
en_US
ethz.journal.issue
4
en_US
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
2122
en_US
ethz.pages.end
2129
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.grant
ULTIMATE: Upper Limit Technology Investigations Mandatory to Attain Terahertz Electronics
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.grant.agreementno
169413
ethz.grant.fundername
SNF
ethz.grant.funderDoi
10.13039/501100001711
ethz.grant.program
Projekte MINT
ethz.date.deposited
2022-04-18T03:29:12Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2022-04-22T09:36:53Z
ethz.rosetta.lastUpdated
2023-02-07T00:55:04Z
ethz.rosetta.versionExported
true
ethz.COinS
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