Steady state lasing in strained germanium microbridges as fundamental measure for the crossover to direct band gap
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The realization of a laser on silicon (Si) from group IV materials is a long-cherished wish of the semiconductor industry; it would enable the mass production of photonic systems at low cost. However, the path towards an efficient light emitter requires material with a direct band gap, in line with all the typical group III-V lasers platforms -. Such configuration can be achieved by loading Ge with tensile strain  by alloying with Sn  or both , . Here, we demonstrate steady state lasing at low temperature in strained germanium microbridges and establish this finding as a fundamental probe for the conduction band line-up between the Γ and L minima. Show more
Book title2021 IEEE 17th International Conference on Group IV Photonics (GFP)
Pages / Article No.
Subjectstrained Ge; group IV; laser; laser linewidth
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