Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
Organisational unit03569 - Batlogg, Bertram (emeritus)
NotesReceived 18 December 2011, Accepted 14 June 2012, Published online 20 July 2012.
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