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dc.contributor.author
Calloni, A.
dc.contributor.author
Ferragut, R.
dc.contributor.author
Dupasquier, A.
dc.contributor.author
Känel, H. von
dc.contributor.author
Guiller, A.
dc.contributor.author
Rutz, A.
dc.contributor.author
Ravelli, L.
dc.contributor.author
Egger, W.
dc.date.accessioned
2017-06-10T08:14:26Z
dc.date.available
2017-06-10T08:14:26Z
dc.date.issued
2012-06
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/1.4737402
dc.identifier.uri
http://hdl.handle.net/20.500.11850/54742
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy
dc.type
Journal Article
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
112
ethz.journal.issue
2
ethz.journal.abbreviated
J. Appl. Physi.
ethz.pages.start
024510
ethz.size
6 p.
ethz.notes
Received 18 December 2011, Accepted 14 June 2012, Published online 20 July 2012.
ethz.identifier.wos
ethz.identifier.nebis
000037502
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-10T08:16:33Z
ethz.source
ECIT
ethz.identifier.importid
imp59364faf7e3a963216
ethz.ecitpid
pub:88312
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-26T14:29:06Z
ethz.rosetta.lastUpdated
2021-02-14T09:17:28Z
ethz.rosetta.versionExported
true
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