Self-Reverse-Blocking Control of Dual-Gate Monolithic Bidirectional GaN Switch With Quasi-Ohmic ON-State Characteristic
- Journal Article
Converter topologies such as current-source rectifiers and inverters require switching devices with bipolar voltage blocking and unidirectional current conduction capability. Recently available dual-gate GaN monolithic bidirectional switches (MBDSs) can mimic such self-reverse-blocking (SRB) behavior if the MBDS’ two gates are controlled accordingly, but thus need twice the number of gate signals and gate drive circuits. Therefore, we propose cascode-diode control (i.e., without additional sensing or gate drive circuitry) of one MBDS gate using a cascode configuration with a low-voltage silicon Schottky diode. The resulting SRB-MBDS features quasi-ohmic conduction characteristic and single-gate control. We provide static and dynamic measurements of a discrete proof-of-concept realization (600-V, 190-mΩ GaN MBDS; 40-V, 10-A silicon Schottky diode) that demonstrate the proposed SRB-MBDS’ feasibility. Show more
Journal / seriesIEEE Transactions on Power Electronics
Pages / Article No.
SubjectBipolar voltage blocking; dual-gate GaN monolithic bidirectional switch; quasi-ohmic conduction characteristics; self-reverse-blocking
Organisational unit03573 - Kolar, Johann W. / Kolar, Johann W.
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