Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

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Author
Bufler, F.M.
Fichtner, W.
Date
2003-02
Type
    Journal Article
Publication status
published
External links
Journal / series
IEEE Transactions on Electron Devices
Volume
50(2)
Pages / Article No.
278 - 284
Publisher
IEEE
Subject
Ballistic transport; Monte Carlo methods; MOSFET scaling; Strained silicon; Velocity overshoot
Notes
Published online 29 April 2003.
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