Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects
Metadata only
Datum
2003-02Typ
- Journal Article
ETH Bibliographie
yes
Altmetrics
Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
IEEE Transactions on Electron DevicesBand
Seiten / Artikelnummer
Verlag
IEEEThema
Ballistic transport; Monte Carlo methods; MOSFET scaling; Strained silicon; Velocity overshootAnmerkungen
Published online 29 April 2003.ETH Bibliographie
yes
Altmetrics