Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects
dc.contributor.author
Bufler, F.M.
dc.contributor.author
Fichtner, W.
dc.date.accessioned
2017-06-10T09:33:32Z
dc.date.available
2017-06-10T09:33:32Z
dc.date.issued
2003-02
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2002.808552
dc.identifier.uri
http://hdl.handle.net/20.500.11850/56345
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Ballistic transport
dc.subject
Monte Carlo methods
dc.subject
MOSFET scaling
dc.subject
Strained silicon
dc.subject
Velocity overshoot
dc.title
Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects
dc.type
Journal Article
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
50
ethz.journal.issue
2
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
278
ethz.pages.end
284
ethz.notes
Published online 29 April 2003.
ethz.identifier.wos
ethz.identifier.nebis
000034955
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-10T09:34:12Z
ethz.source
ECIT
ethz.identifier.importid
imp59364fd08fd2f87454
ethz.ecitpid
pub:90593
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T22:25:25Z
ethz.rosetta.lastUpdated
2024-02-01T19:29:42Z
ethz.rosetta.versionExported
true
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Journal Article [133571]