Show simple item record

dc.contributor.author
Dröscher, Susanne
dc.contributor.author
Barraud, Clément
dc.contributor.author
Watanabe, Kenji
dc.contributor.author
Taniguchi, Takashi
dc.contributor.author
Ihn, Thomas M.
dc.contributor.author
Ensslin, Klaus
dc.date.accessioned
2018-11-08T08:20:51Z
dc.date.available
2017-06-10T09:53:49Z
dc.date.available
2018-11-08T08:20:51Z
dc.date.issued
2012-10
dc.identifier.issn
1367-2630
dc.identifier.other
10.1088/1367-2630/14/10/103007
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/56763
dc.identifier.doi
10.3929/ethz-b-000056763
dc.description.abstract
We present transport measurements on a bilayer graphene sheet with a homogeneous back gate and a split top gate. The electronic transport data indicate the capability of directing electron flow through bilayer graphene nanostructures purely defined by electrostatic gating. Comparing the transconductance data recorded for different top gate geometries—continuous barrier and split gate—the observed transport features for the split gate can be attributed to the interference effects inside the narrow opening.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Institute of Physics
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-sa/3.0/
dc.title
Electron flow in split-gated bilayer graphene
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported
dc.date.published
2018-10-02
ethz.journal.title
New Journal of Physics
ethz.journal.volume
14
en_US
ethz.journal.abbreviated
New j. phys.
ethz.pages.start
103007
en_US
ethz.size
11 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.nebis
001997538
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus::08835 - Ihn, Thomas (Tit.-Prof.)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.date.deposited
2017-06-10T09:57:26Z
ethz.source
ECIT
ethz.identifier.importid
imp59364fd97d47465177
ethz.ecitpid
pub:91137
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-13T13:32:57Z
ethz.rosetta.lastUpdated
2020-02-15T15:51:07Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Electron%20flow%20in%20split-gated%20bilayer%20graphene&rft.jtitle=New%20Journal%20of%20Physics&rft.date=2012-10&rft.volume=14&rft.spage=103007&rft.issn=1367-2630&rft.au=Dr%C3%B6scher,%20Susanne&Barraud,%20Cl%C3%A9ment&Watanabe,%20Kenji&Taniguchi,%20Takashi&Ihn,%20Thomas%20M.&rft.genre=article&
 Search via SFX

Files in this item

Thumbnail

Publication type

Show simple item record