Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model

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Author
Schenk, A.
Wettstein, A.
Date
2003-03
Type
  • Other Conference Item
Publication status
published
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Journal / series
IEICE transactions on electronics
Volume
E86C(3)
Pages / Article No.
385 - 390
Publisher
IEICE-Inst. Electronics Information Communications Eng.
Event
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002), Kobe, Japan, September 04-06, 2002
Subject
Device simulation; DGSOI MOSFET; Channel mobility; Quantum effects; Schrodinger-Poisson solver
Notes
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