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dc.contributor.author
Ghosh, Bishnupada
dc.contributor.author
Sahu, Mrinmay
dc.contributor.author
Samanta, Debabrata
dc.contributor.author
Saha, Pinku
dc.contributor.author
Mondal, Anshuman
dc.contributor.author
Mukherjee, Goutam Dev
dc.date.accessioned
2022-09-27T06:24:45Z
dc.date.available
2022-09-26T04:25:57Z
dc.date.available
2022-09-27T06:24:45Z
dc.date.issued
2022-09-01
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.issn
2469-9950
dc.identifier.other
10.1103/PhysRevB.106.104102
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/572579
dc.description.abstract
We have carried out a detailed high pressure investigation using x-ray diffraction, Raman spectroscopy, and low temperature resistivity measurements on 1T ZrSe2 having an excess of 3 at.% Zr. A careful x-ray diffraction data analysis shows that the sample undergoes a gradual structural transition to a monoclinic structure, with a mixed phase in the pressure range of 5.9 GPa to 14.8 GPa. We observe a minimum in the c/a ratio as well as in the full width at half maximum of the A(1g) Raman mode at the same pressure in the parent 1T phase, which indicates an electronic phase transition. The sample shows a metallic characteristic in its low temperature resistivity data at ambient pressure, which persist until about 5.1 GPa and can be related to the presence of slight excess Zr. At and above 7.3 GPa, the sample shows a metal to semiconductor transition with the opening of a very small band gap, which increases with pressure. The low temperature resistivity data show an upturn, which flattens with the increase in pressure. The phenomenological analysis of the low temperature resistivity data indicates the presence of the Kondo effect in the sample, which may be due to the excess Zr.
en_US
dc.language.iso
en
en_US
dc.publisher
American Physical Society
en_US
dc.subject
High-pressure studies
en_US
dc.subject
Pressure effects
en_US
dc.subject
Transition metal dichalcogenides
en_US
dc.subject
Crystal structures
en_US
dc.subject
Pressure techniques
en_US
dc.subject
Raman spectroscopy
en_US
dc.subject
Resistivity measurements
en_US
dc.title
Structural and electronic phase transitions in Zr1.03Se2 at high pressure
en_US
dc.type
Journal Article
dc.date.published
2022-09-07
ethz.journal.title
Physical Review B
ethz.journal.volume
106
en_US
ethz.journal.issue
10
en_US
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
104102
en_US
ethz.size
11 p.
en_US
ethz.identifier.wos
ethz.publication.place
Ridge, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02330 - Dep. Erd- und Planetenwissenschaften / Dep. of Earth and Planetary Sciences::02725 - Institut für Geochemie und Petrologie / Institute of Geochemistry and Petrology::09495 - Murakami, Motohiko / Murakami, Motohiko
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02330 - Dep. Erd- und Planetenwissenschaften / Dep. of Earth and Planetary Sciences::02725 - Institut für Geochemie und Petrologie / Institute of Geochemistry and Petrology::09495 - Murakami, Motohiko / Murakami, Motohiko
ethz.date.deposited
2022-09-26T04:26:03Z
ethz.source
WOS
ethz.eth
no
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2022-09-27T06:24:46Z
ethz.rosetta.lastUpdated
2023-02-07T06:33:14Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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