Field-enhancing tapered planarized waveguides for THz quantum cascade laser frequency combs
dc.contributor.author
Senica, Urban
dc.contributor.author
Forrer, Andres
dc.contributor.author
Olariu, Tudor
dc.contributor.author
Micheletti, Paolo
dc.contributor.author
Cibella, Sara
dc.contributor.author
Torrioli, Guido
dc.contributor.author
Beck, Mattias
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Scalari, Giacomo
dc.contributor.editor
Costa, Manuel Filipe
dc.contributor.editor
Flores-Arias, Maite
dc.contributor.editor
Pauliat, Gilles
dc.contributor.editor
Segonds, Patricia
dc.date.accessioned
2022-10-28T12:38:50Z
dc.date.available
2022-10-28T08:52:34Z
dc.date.available
2022-10-28T12:38:50Z
dc.date.issued
2022-10-13
dc.identifier.issn
2100-014X
dc.identifier.issn
2101-6275
dc.identifier.other
10.1051/epjconf/202226609007
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/578270
dc.identifier.doi
10.3929/ethz-b-000578270
dc.description.abstract
We present a new planarized waveguide geometry for THz quantum cascade laser frequency combs with improved waveguide losses, RF and thermal dissipation properties. Ridge devices display broadband free-running comb states, and the THz emission can be further broadened by RF injection. Tapered waveguide devices feature a strong field-enhancement effect, which results in an improved comb performance. This includes free-running comb states with strong single beatnotes up to nearly -30 dBm at 90 K, almost three orders of magnitude stronger than for ridge devices. Improved comb operation is maintained also for high operating temperatures, up to 115 K.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
EDP Sciences
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
Field-enhancing tapered planarized waveguides for THz quantum cascade laser frequency combs
en_US
dc.type
Other Conference Item
dc.rights.license
Creative Commons Attribution 4.0 International
ethz.book.title
EOS Annual Meeting (EOSAM 2022)
en_US
ethz.journal.title
EPJ Web of Conferences
ethz.journal.volume
266
en_US
ethz.journal.abbreviated
EPJ Web Conf.
ethz.pages.start
09007
en_US
ethz.size
2 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.event
EOS Annual Meeting (EOSAM 2022)
en_US
ethz.event.location
Porto, Portugal
en_US
ethz.event.date
September 12-16, 2022
en_US
ethz.publication.place
Les Ulis
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.date.deposited
2022-10-28T08:52:34Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2022-10-28T12:38:52Z
ethz.rosetta.lastUpdated
2023-02-07T07:23:49Z
ethz.rosetta.versionExported
true
ethz.COinS
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