Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy
dc.contributor.author
Kumar, Piyush
dc.contributor.author
Martins, Maria Inês M.
dc.contributor.author
Bathen, Marianne
dc.contributor.author
Woerle, Judith
dc.contributor.author
Prokscha, Thomas
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2022-10-31T08:37:43Z
dc.date.available
2022-10-31T08:23:56Z
dc.date.available
2022-10-31T08:24:33Z
dc.date.available
2022-10-31T08:37:43Z
dc.date.issued
2022-05
dc.identifier.issn
0255-5476
dc.identifier.issn
1662-9752
dc.identifier.other
10.4028/p-w73601
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/578561
dc.identifier.doi
10.3929/ethz-b-000578561
dc.description.abstract
In this work, the interface between 4H-SiC and thermally grown SiO2 is studied using low energy muon spin rotation (LE-μSR) spectroscopy. Samples oxidized at 1300 °C were annealed in NO or Ar ambience and the effect of the ambience and the annealing temperature on the near interface region is studied in a depth resolved manner. NO-annealing is expected to passivate the defects, resulting in reduction of interface traps, which is confirmed by electrical characterization. Introduction of N during annealing, to the SiC matrix, results in a thin, carrier rich region close to the interface leading to an increase in the diamagnetic asymmetry. Annealing in an inert environment (Ar) seems to have much lesser impact on the electrical signal, however the μSR shows a reduced paramagnetic asymmetry, indicating a narrow region of low mobility at the interface.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Trans Tech Publications
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Muon spin rotation spectroscopy
en_US
dc.subject
Thermal oxidation
en_US
dc.subject
Post-oxidation annealing
en_US
dc.subject
interface defects
en_US
dc.title
Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2022-05-31
ethz.journal.title
Materials Science Forum
ethz.journal.volume
1062
en_US
ethz.pages.start
315
en_US
ethz.pages.end
319
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.publication.place
Baech
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2022-10-31T08:23:57Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2022-10-31T08:37:45Z
ethz.rosetta.lastUpdated
2023-02-07T07:24:32Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Depth-Resolved%20Study%20of%20the%20SiO2-%20SiC%20Interface%20Using%20Low-Energy%20Muon%20Spin%20Rotation%20Spectroscopy&rft.jtitle=Materials%20Science%20Forum&rft.date=2022-05&rft.volume=1062&rft.spage=315&rft.epage=319&rft.issn=0255-5476&1662-9752&rft.au=Kumar,%20Piyush&Martins,%20Maria%20In%C3%AAs%20M.&Bathen,%20Marianne&Woerle,%20Judith&Prokscha,%20Thomas&rft.genre=article&rft_id=info:doi/10.4028/p-w73601&
Files in this item
Publication type
-
Journal Article [133721]