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dc.contributor.author
Ding, Qian
dc.contributor.author
Kuhlmann, Andreas V.
dc.contributor.author
Fuhrer, Andreas
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2023-06-06T14:57:15Z
dc.date.available
2022-12-31T04:13:26Z
dc.date.available
2023-01-13T10:47:01Z
dc.date.available
2023-06-06T09:43:18Z
dc.date.available
2023-06-06T14:57:15Z
dc.date.issued
2023-02
dc.identifier.issn
0038-1101
dc.identifier.other
10.1016/j.sse.2022.108550
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/589506
dc.identifier.doi
10.3929/ethz-b-000589506
dc.description.abstract
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1 K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Hole spin qubit
en_US
dc.subject
Silicon FinFETs
en_US
dc.subject
Electric control
en_US
dc.subject
TCAD AC simulation
en_US
dc.title
A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2022-12-09
ethz.journal.title
Solid-State Electronics
ethz.journal.volume
200
en_US
ethz.journal.abbreviated
Solid-State Electron.
ethz.pages.start
108550
en_US
ethz.size
4 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Amsterdam
en_US
ethz.publication.status
published
en_US
ethz.relation.isSupplementedBy
10.3929/ethz-b-000615351
ethz.date.deposited
2022-12-31T04:13:27Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2023-01-13T10:47:02Z
ethz.rosetta.lastUpdated
2024-02-02T23:55:33Z
ethz.rosetta.versionExported
true
ethz.COinS
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