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dc.contributor.author
Bolognesi, Colombo R.
dc.contributor.author
Arabhavi, Akshay M.
dc.contributor.author
Hersent, Romain
dc.contributor.author
Hamzeloui, Sara
dc.contributor.author
Jorge, Filipe
dc.contributor.author
Wen, Xin
dc.contributor.author
Riet, Muriel
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Nodjiadjim, Virginie
dc.contributor.author
Ciabattini, Filippo
dc.contributor.author
Mismer, Colin
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Konczykowska, Agnieszka
dc.date.accessioned
2023-06-05T14:55:43Z
dc.date.available
2023-01-30T14:23:02Z
dc.date.available
2023-02-16T13:41:04Z
dc.date.available
2023-06-05T14:55:43Z
dc.date.issued
2022
dc.identifier.isbn
978-1-6654-9132-7
en_US
dc.identifier.isbn
978-1-6654-9133-4
en_US
dc.identifier.other
10.1109/BCICTS53451.2022.10051763
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/595908
dc.description.abstract
"Type-II" InP/GaAsSb DHBTs are the first non-GaInAs -based transistors to show oscillation frequencies > 1 THz with the associated benefits of higher breakdown voltages, low power dissipation, and superior linearity and scaling characteristics. Whereas no large-signal characterization of THz transistors is found in the literature, THz InP/GaAsSb DHBTs display attractive 94 GHz load-pull characteristics, and less aggressively scaled devices achieve record saturated output power and output power density per unit emitter area. The physical advantages of Type-II InP/GaAsSb are reviewed here. Beyond impressive analog small/large-signal performance metrics, we report a record mixed-signal performance for a PAM-4 DAC-driver designed and fabricated at III-V Lab in a 0.7-μm InP/GaAsSb DHBT technology implemented on epitaxial layers grown at ETHZ. The DAC-driver offers an unprecedented 5.5-Vppd 90-GBd (180 Gb/s) differential output swing with high eye diagram quality and over 12-dB gain control capability at a 1.1-W power consumption, leading to a record 3.1-GBd E/O modulator driver figure-of-merit (FoM). PAM-4 operation at 112-Gb (224 Gb/s) is also demonstrated with 3.35-Vppd and 0.6-W dissipation, also with a record 2.6-GBb E/O FoM. A 110 GHz bandwidth linear driver with a 16.7 dB gain and 0.85-W consumption was also implemented in the same technology, enabling a 4.1-Vppd output swing at 100 Gb/s both in PAM-4 and NRZ signaling. The all-around outstanding performance of InP/GaAsSb DHBTs makes them attractive for a wide variety of analog and mixed-signal circuit blocks used in modern telecommunication applications.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Type-II DHBTs
en_US
dc.subject
InP/GaAsSb DHBTs
en_US
dc.subject
Power Amplifiers (PAs)
en_US
dc.subject
Pulse-Amplitude Modulation Format (PAM-4)
en_US
dc.subject
Linear Driver
en_US
dc.subject
Analog/Digital Circuits
en_US
dc.title
InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver
en_US
dc.type
Conference Paper
dc.date.published
2023-02-27
ethz.book.title
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
en_US
ethz.pages.start
112
en_US
ethz.pages.end
119
en_US
ethz.event
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2022)
en_US
ethz.event.location
Phoenix, AZ, USA
en_US
ethz.event.date
October 16-19, 2022
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
en_US
ethz.date.deposited
2023-01-30T14:23:03Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2023-06-05T14:55:44Z
ethz.rosetta.lastUpdated
2024-02-02T23:54:27Z
ethz.rosetta.versionExported
true
ethz.COinS
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