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dc.contributor.author
Munzer, David
dc.contributor.author
Mannem, Naga Sasikanth
dc.contributor.author
Lee, Jeongseok
dc.contributor.author
Wang, Hua
dc.date.accessioned
2023-06-08T13:31:14Z
dc.date.available
2023-01-31T15:53:59Z
dc.date.available
2023-02-07T07:25:32Z
dc.date.available
2023-06-08T13:31:14Z
dc.date.issued
2023-06
dc.identifier.issn
0018-9200
dc.identifier.issn
1558-173X
dc.identifier.other
10.1109/jssc.2022.3211935
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/596322
dc.description.abstract
High-performance RF/mm-Wavefront ends often require in situ sensing circuitries to monitor performance metrics and drive their built-in-self-test (BiST) algorithms for performance recovery or optimization. In large-scaled integrated phased-arrays, antenna coupling often results in dynamic beam-dependent impedance variations antenna voltage standing wave ratio (VSWR) and front-end degradation, necessitating in situ load-invariant power/impedance sensors. However, the state-of-the-art mm-Wave sensors only demonstrate sensing at a single frequency, instead of the entire frequency band of interest with limited accuracy over antenna VSWR. Therefore, we propose a broadband current/voltage sensing-based VSWR resilient true power/impedance sensor supporting single-ended interfaces using the GlobalFoundries 45 nm CMOS SOI process. Comprehensive theoretical analyses of the coupling mechanisms and analog multiplier architectures are presented. Sources of error for power sensing are highlighted in detail. At 34 GHz, the proposed sensor measures the power sensing error (PSE)≤±1 dB for 3:1 VSWR and ± 0.5 dB for 2:1 VSWR. Over 22–41 GHz, the measured PSE is ≤ ± 3.4 dB for 3:1 VSWR and ± 1.5 dB for 2:1 VSWR. In addition, the proposed sensor under a 50 Ω load demonstrates a maximum dynamic range of 22.89 dB at 42 GHz and a dynamic range > 21.46 dB over 27–41 GHz. At 33 GHz, the measured |Γ| / ∠ Γ errors are ≤ 0.072/7.3 ∘ for 3:1 VSWR and ≤ 0.04/7.13 ∘ for 2:1 VSWR, while demonstrating |Γ| / ∠ Γ errors of ≤ 0.2/34 ∘ for 3:1 VSWR and ≤ 0.11/27 ∘ for 2:1 VSWR over the entire 27–41 GHz BW. The chip die occupies an area of 0.97 × 1.99 mm and a sensor core area of 0.48 × 1.66 mm.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Sensors
en_US
dc.subject
Impedance
en_US
dc.subject
Couplings
en_US
dc.subject
Loaded antennas
en_US
dc.subject
Power generation
en_US
dc.subject
Voltage
en_US
dc.subject
Antenna measurements
en_US
dc.title
Broadband mm-Wave Current/Voltage Sensing-Based VSWR-Resilient True Power/Impedance Sensor Supporting Single-Ended Antenna Interfaces
en_US
dc.type
Journal Article
dc.date.published
2022-10-18
ethz.journal.title
IEEE Journal of Solid-State Circuits
ethz.journal.volume
58
en_US
ethz.journal.issue
6
en_US
ethz.journal.abbreviated
IEEE J. Solid-State Circuits
ethz.pages.start
1535
en_US
ethz.pages.end
1551
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::09757 - Wang, Hua / Wang, Hua
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::09757 - Wang, Hua / Wang, Hua
en_US
ethz.date.deposited
2023-01-31T15:54:00Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2023-06-08T13:31:16Z
ethz.rosetta.lastUpdated
2024-02-02T23:58:06Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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