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dc.contributor.author
Liu, Yang
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Antoniadis, Dimitri
dc.contributor.author
Majumdar, Amlan
dc.contributor.author
Lundstrom, Mark S.
dc.date.accessioned
2017-06-10T11:55:32Z
dc.date.available
2017-06-10T11:55:32Z
dc.date.issued
2012-12
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.uri
http://hdl.handle.net/20.500.11850/60007
dc.language.iso
en
dc.publisher
IEEE-Inst Electrical Electronics Engineers INC
dc.subject
III-V MOSFETs
dc.subject
Injection velocity
dc.subject
Virtual source (VS)
dc.title
On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs (vol 59, pg 994, 2012)
dc.type
Journal Article
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
59
ethz.journal.issue
12
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
3655
ethz.pages.end
3655
ethz.identifier.wos
ethz.identifier.nebis
000034955
ethz.publication.place
Piscataway, N.J., USA
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-10T11:56:02Z
ethz.source
ECIT
ethz.identifier.importid
imp5936501a88e6696872
ethz.ecitpid
pub:95981
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-17T09:03:58Z
ethz.rosetta.lastUpdated
2019-01-02T05:46:53Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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