Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
dc.contributor.author
Qaderi, Fatemeh
dc.contributor.author
Rosca, Teodor
dc.contributor.author
Burla, Maurizio
dc.contributor.author
Leuthold, Juerg
dc.contributor.author
Flandre, Denis
dc.contributor.author
Ionescu, Adrian M.
dc.date.accessioned
2023-06-08T06:44:24Z
dc.date.available
2023-06-03T05:42:17Z
dc.date.available
2023-06-08T06:44:24Z
dc.date.issued
2023
dc.identifier.issn
2662-4443
dc.identifier.other
10.1038/s43246-023-00350-x
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/615035
dc.identifier.doi
10.3929/ethz-b-000615035
dc.description.abstract
In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W−1 at 1 μW, with a low noise equivalent power of 5 nW.Hz−0.5 at room temperature, for a footprint of 2.5 × 10−5 mm2. The responsivity in static characterizations is 76 kV.W−1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Nature
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2023-05-22
ethz.journal.title
Communications Materials
ethz.journal.volume
4
en_US
ethz.journal.issue
1
en_US
ethz.pages.start
34
en_US
ethz.size
12 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.scopus
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
ethz.date.deposited
2023-06-03T05:42:18Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2023-06-08T06:44:25Z
ethz.rosetta.lastUpdated
2024-02-02T23:56:44Z
ethz.rosetta.versionExported
true
ethz.COinS
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