Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

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Author
Park, Seung Hyun
Liu, Yang
Kharche, Neerav
Jelodar, Mehdi Salmani
Klimeck, Gerhard
Lundstrom, Mark S.
Luisier, Mathieu
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Date
2012-08
Type
    Journal Article
Publication status
published
External links
Journal / series
IEEE Transactions on Electron Devices
Volume
59(8)
Pages / Article No.
2107 - 2114
Publisher
IEEE
Subject
Double gate; III-V versus Si; InGaAs; FinFETs; Metal-oxide-semiconductor FETs; Real-space effective mass simulations; Single gate; Strained-Si; Triple gate
Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu  
Notes
Manuscript received 16 February 2012, Revised 25 April 2012, Accepted 27 April 2012.
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