Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs

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Author
Tao, N. G.M.
Liu, H. G.
Bolognesi, Colombo R.
Date
2007
Type
    Journal Article
Publication status
published
External links
Journal / series
Solid-State Electronics
Volume
51(6)
Pages / Article No.
995 - 1001
Publisher
Elsevier
Subject
Surface state; Fermi level pinning; Numerical simulation; Surface recombination current; Double heterostructure bipolar transistor (DHBT); InP; GaAsSb
Organisational unit
03472 - Professur für Feldtheorie (ehemalig)  
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Received 12 February 2007. revised 16 April 2007. accepted 16 April 2007. The review of this paper was arranged by Prof. A. Zaslavsky. Available online 8 June 2007.
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