High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT = 436 GHz
Metadata only
Date
2007Type
- Journal Article
Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
Current gain; cutoff frequency (f(T)); double heterojunction bipolar transistors (DHBTs); GaAsSb; GaInP; InP; type II band line upOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
03472 - Professur für Feldtheorie (ehemalig)
Notes
Current Version Published: 2007-09-24. Manuscript received June 27, 2007, Revised July 26, 2007.More
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