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dc.contributor.author
Alt, A. R.
dc.contributor.author
Bolognesi, C. R.
dc.date.accessioned
2017-06-10T13:49:56Z
dc.date.available
2017-06-10T13:49:56Z
dc.date.issued
2013-02
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2012.2234751
dc.identifier.uri
http://hdl.handle.net/20.500.11850/63441
dc.language.iso
en
dc.publisher
IEEE
dc.subject
$R_{c}$ , $R_{g}$
dc.subject
Annealed
dc.subject
InP HEMT
dc.subject
Contact
dc.subject
Cryogenic
dc.subject
Gate
dc.subject
Nonannealed
dc.subject
Process metals
dc.subject
Resistance
dc.subject
Temperature dependence
dc.title
Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K
dc.type
Journal Article
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
60
ethz.journal.issue
2
ethz.journal.abbreviated
IEEE trans. electron devices
ethz.pages.start
787
ethz.pages.end
792
ethz.notes
Published online 14 January 2013.
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000034955
ethz.publication.place
New York
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-10T13:52:01Z
ethz.source
ECIT
ethz.identifier.importid
imp59365054e300586177
ethz.ecitpid
pub:100448
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T14:39:00Z
ethz.rosetta.lastUpdated
2019-01-02T05:53:18Z
ethz.rosetta.versionExported
true
ethz.COinS
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