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dc.contributor.author
Hu, Anliang
dc.contributor.author
Biela, Jürgen
dc.date.accessioned
2024-03-22T10:25:43Z
dc.date.available
2023-10-09T12:24:43Z
dc.date.available
2023-10-10T07:33:57Z
dc.date.available
2024-03-22T10:25:43Z
dc.date.issued
2023
dc.identifier.isbn
978-9-0758-1541-2
en_US
dc.identifier.isbn
979-8-3503-1678-0
en_US
dc.identifier.other
10.23919/epe23ecceeurope58414.2023.10264616
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/635625
dc.identifier.doi
10.3929/ethz-b-000635625
dc.description.abstract
This paper proposes a novel data sheet based, fully analytical turn-on switching loss model for a SiC MOSFET and Schottky diode half-bridge including parasitics. The proposed model shows similar accuracy (error around 28%) compared to analytical switching loss models without closed-form analytical equations in the literature, while reducing the computational effort by more than 20 times. In addition, the proposed model shows the best accuracy (error around 12.4%) compared to other fully analytical switching loss models in the literature, which is verified by using measured device characteristics instead of data sheet information. The accuracy of the proposed model is comprehensively verified by double pulse tests using 5 different SiC MOSFET (with different structures) and Schottky diode pairs from different manufacturers.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
Wide bandgap devices
en_US
dc.subject
SiC MOSFET
en_US
dc.subject
Switching losses
en_US
dc.subject
Analytical model
en_US
dc.title
Fast and Accurate Data Sheet based Analytical Turn-on Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge
en_US
dc.type
Conference Paper
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2023-10-02
ethz.book.title
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
en_US
ethz.pages.start
10264616
en_US
ethz.size
11 p.
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.event
25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
en_US
ethz.event.location
Aalborg, Denmark
en_US
ethz.event.date
September 4-8, 2023
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03889 - Biela, Jürgen / Biela, Jürgen
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03889 - Biela, Jürgen / Biela, Jürgen
en_US
ethz.date.deposited
2023-10-09T12:24:43Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2023-10-10T07:33:59Z
ethz.rosetta.lastUpdated
2023-10-10T07:33:59Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Fast%20and%20Accurate%20Data%20Sheet%20based%20Analytical%20Turn-on%20Switching%20Loss%20Model%20for%20a%20SiC%20MOSFET%20and%20Schottky%20Diode%20Half-Bridge&rft.date=2023&rft.spage=10264616&rft.au=Hu,%20Anliang&Biela,%20J%C3%BCrgen&rft.isbn=978-9-0758-1541-2&979-8-3503-1678-0&rft.genre=proceeding&rft_id=info:doi/10.23919/epe23ecceeurope58414.2023.10264616&rft.btitle=2023%2025th%20European%20Conference%20on%20Power%20Electronics%20and%20Applications%20(EPE'23%20ECCE%20Europe)
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