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dc.contributor.author
Pocaterra, Marco
dc.contributor.author
Ciappa, Mauro
dc.date.accessioned
2023-11-23T13:27:48Z
dc.date.available
2023-11-23T04:48:00Z
dc.date.available
2023-11-23T13:27:48Z
dc.date.issued
2023-11
dc.identifier.issn
0026-2714
dc.identifier.issn
1872-941X
dc.identifier.other
10.1016/j.microrel.2023.115127
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/643340
dc.identifier.doi
10.3929/ethz-b-000643340
dc.description.abstract
In this paper it is shown experimentally that single alpha particles emitted from radioactive sources can produce Single Event Burnout failures in silicon and silicon carbide power devices at blocking bias levels below 90 % of the breakdown voltage. Silicon carbide devices have been shown to be more susceptible than Si devices because of the enhanced strength of the electric field and of the thinner depletion layer. TCAD simulation is used to model the initiation of the streamers and the subsequent thermal runaway.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Single event burnout
en_US
dc.subject
Alpha particles
en_US
dc.subject
Radioactive source
en_US
dc.subject
SEB susceptibility
en_US
dc.subject
Silicon
en_US
dc.subject
Silicon carbide
en_US
dc.subject
Power semiconductor devices
en_US
dc.title
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2023-10-01
ethz.journal.title
Microelectronics Reliability
ethz.journal.volume
150
en_US
ethz.journal.abbreviated
Microelectron. Reliab.
ethz.pages.start
115127
en_US
ethz.size
6 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.status
published
en_US
ethz.date.deposited
2023-11-23T04:48:00Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2023-11-23T13:27:49Z
ethz.rosetta.lastUpdated
2024-02-03T06:54:07Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Single%20event%20burnout%20failures%20caused%20in%20silicon%20and%20silicon%20carbide%20power%20devices%20by%20single%20alpha%20particles%20emitted%20from%20radioactive%&rft.jtitle=Microelectronics%20Reliability&rft.date=2023-11&rft.volume=150&rft.spage=115127&rft.issn=0026-2714&1872-941X&rft.au=Pocaterra,%20Marco&Ciappa,%20Mauro&rft.genre=article&rft_id=info:doi/10.1016/j.microrel.2023.115127&
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