3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector
dc.contributor.author
Huwyler, Nicolas
dc.contributor.author
Gaulke, Marco
dc.contributor.author
Heidrich, Jonas
dc.contributor.author
Golling, Matthias
dc.contributor.author
Barh, Ajanta
dc.contributor.author
Keller, Ursula
dc.contributor.editor
Bedford, Robert G.
dc.date.accessioned
2024-02-20T09:59:36Z
dc.date.available
2023-12-22T13:51:06Z
dc.date.available
2024-02-20T09:59:36Z
dc.date.issued
2023
dc.identifier.isbn
978-1-5106-5913-1
en_US
dc.identifier.isbn
978-1-5106-5914-8
en_US
dc.identifier.issn
0277-786X
dc.identifier.other
10.1117/12.2649717
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/649392
dc.description.abstract
The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the reflector thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed VECSEL emitting at 2 µm using a GaSb/AlAs0.08Sb0.92 hybrid Bragg reflector with 10.5 mirror pairs and a 100–nm copper layer. The flip-chip processed VECSEL reaches a record high continuous wave average output power of 3 W. The device thickness is reduced by 2.5 µm (36%) compared to the standard 19.5 layer semiconductor-only Bragg reflector design.
en_US
dc.language.iso
en
en_US
dc.publisher
SPIE
en_US
dc.title
3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector
en_US
dc.type
Other Conference Item
ethz.book.title
Vertical External Cavity Surface Emitting Lasers (VECSELs) XII
en_US
ethz.journal.title
Proceedings of SPIE
ethz.journal.volume
12404
en_US
ethz.journal.abbreviated
Proc. SPIE Int. Soc. Opt. Eng.
ethz.pages.start
1240406
ethz.event
SPIE LASE 2023
en_US
ethz.event.location
San Francisco, CA, USA
en_US
ethz.event.date
January 28 - February 3, 2023
en_US
ethz.publication.place
Bellingham, WA
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.date.deposited
2023-12-22T13:51:06Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2024-02-20T09:59:37Z
ethz.rosetta.lastUpdated
2024-02-20T09:59:37Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
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Other Conference Item [19508]