Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters

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Author
Lövblom, Rickard
Flückiger, Ralf
Ostinelli, Olivier
Alexandrova, Maria
Bolognesi, Colombo R.
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Date
2013
Type
    Journal Article
Publication status
published
External links
Journal / series
IEEE Electron Device Letters
Volume
34(5)
Pages / Article No.
602 - 604
Publisher
IEEE
Subject
AlInP; Current gain; Double-heterojunction bipolar transistors (DHBTs); Emitter size effect; GaAsSb; GaInP; Millimeter-wave transistors
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Manuscript received 18 December 2012, Revised 13 February 2013, Accepted 23 February 2013, Date of publication 1 April 2013, Date of current Version 22 April 2013.
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