Emitter size effects and scalability of GaInP/GaAsSb/InP DHBTS

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Author
Liu, H. G.
Ostinelli, Olivier
Zeng, Y. P.
Bolognesi, Colombo R.
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Date
2008
Type
    Conference Paper
Publication status
published
External links
Book title
2008 IEEE 20th International Conference on Indium Phosphide & Related Materials
Pages / Article No.
79 - 81
Publisher
IEEE
Event
20th International Conference on Indium Phosphide and Related Materials, Versailles, France, May 25-29, 2008
Subject
Double heterojunction bipolar transistors (DHBTs); GaAsSb; Band discontinuities; Current gain; Emitter size effects; Recombination current; Arsenic mole fraction
Organisational unit
03472 - Professur für Feldtheorie (ehemalig)  
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
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