- Journal Article
For some heavy-fermion compounds, it has been suggested that a Fermi-surface-changing Lifshitz transition, which can be driven, e.g., by varying an applied magnetic field, occurs inside the heavy-fermion regime. Here we discuss, based on microscopic calculations, how the location of such a transition can be influenced by carrier doping. While doping rigidly shifts the bands in a free-electron system, strong electronic correlations drastically modify the picture. We therefore systematically study the doping-induced energetic shift of band features in heavy Fermi liquids, with the surprising result that the actual shift is determined by the interplay of heavy and additional light bands crossing the Fermi level: doped carriers tend to populate heavy and light bands equally, despite the fact that the latter contribute a small density of states of excitations only. This invalidates naive estimates of the band shift based on the low-temperature specific heat of the heavy Fermi liquid. We discuss applications of our results. © 2013 American Physical Society. Show more
Journal / seriesPhysical Review B
Pages / Article No.
PublisherAmerican Physical Society
Organisational unit03571 - Sigrist, Manfred / Sigrist, Manfred
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