Midinfrared electroluminescence from InAs/InP quantum dashes
dc.contributor.author
Liverini, Valeria
dc.contributor.author
Bismuto, Alfredo
dc.contributor.author
Nevou, Laurent
dc.contributor.author
Beck, Mattias
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2024-07-24T06:54:56Z
dc.date.available
2024-07-24T06:52:13Z
dc.date.available
2024-07-24T06:54:56Z
dc.date.issued
2010-11-29
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.3524213
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/684816
dc.description.abstract
We report midinfrared intraband electroluminescence from quantum cascade structures based on InAs/AlInGaAs quantum dashes grown on InP. The devices show a clear broad emission around 150 meV, which is attributed to an intraband transition between the quantum dashes and the following quantum wells. The emission is not present in a control structure without the dashes. The observed transition is mainly
-polarized and does not depend on the dash orientation. This indicates that the confinement in the dashes is mainly due to their height. Our results are promising for the development of broad-gain quantum cascade lasers based on three-dimensionally confined active regions.
en_US
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.subject
aluminium compounds
en_US
dc.subject
electroluminescence
en_US
dc.subject
gallium arsenide
en_US
dc.subject
III-V semiconductors
en_US
dc.subject
indium compounds
en_US
dc.subject
quantum dash lasers
en_US
dc.subject
semiconductor quantum wells
en_US
dc.title
Midinfrared electroluminescence from InAs/InP quantum dashes
en_US
dc.type
Journal Article
dc.date.published
2010-12-02
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
97
en_US
ethz.journal.issue
22
en_US
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
221109
en_US
ethz.size
3 p.
en_US
ethz.identifier.wos
ethz.publication.place
Melville, NY
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-09T08:15:35Z
ethz.source
ECIT
ethz.identifier.importid
imp59364d6fc247d21493
ethz.identifier.importid
imp59364d75bda8352182
ethz.ecitpid
pub:45635
ethz.ecitpid
pub:46022
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2024-07-24T06:52:15Z
ethz.rosetta.lastUpdated
2024-07-24T06:52:15Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/26901
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/162500
ethz.COinS
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