Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors
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Date
2013Type
- Journal Article
Publication status
publishedJournal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Device simulation; Intraband tunneling; Nanowire transistor; Top-of-the-barrier (ToB) modelOrganisational unit
03925 - Luisier, Mathieu
Notes
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