Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors
Metadata only
Datum
2013-07Typ
- Journal Article
Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
IEEE Transactions on Electron DevicesBand
Seiten / Artikelnummer
Verlag
IEEEThema
Device simulation; Intraband tunneling; Nanowire transistor; Top-of-the-barrier (ToB) modelOrganisationseinheit
03925 - Luisier, Mathieu / Luisier, Mathieu
Förderung
133591 - Physics-based Modeling of Electronic Devices at the Nanometer Scale (SNF)