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dc.contributor.author
Falub, Claudiu V.
dc.contributor.author
Meduňa, Mojmír
dc.contributor.author
Chrastina, Daniel
dc.contributor.author
Isa, Fabio
dc.contributor.author
Marzegalli, Anna
dc.contributor.author
Kreiliger, Thomas
dc.contributor.author
Taboada, Alfonso G.
dc.contributor.author
Isella, Giovanni
dc.contributor.author
Miglio, Leo
dc.contributor.author
Dommann, Alex
dc.contributor.author
von Känel, Hans
dc.date.accessioned
2018-09-05T11:17:03Z
dc.date.available
2017-06-10T20:06:11Z
dc.date.available
2018-09-05T11:17:03Z
dc.date.issued
2013-07-24
dc.identifier.other
10.1038/srep02276
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/70501
dc.identifier.doi
10.3929/ethz-b-000070501
dc.description.abstract
The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause dislocations, substrate bowing and even layer cracking. Minimizing these drawbacks is therefore essential for heterostructures based on thick layers to be of any use for device fabrication. Here we prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily dislocated interface. We show that relaxing thermal and misfit strains result just in lattice bending and tiny crystal tilts. We may thus expect a new concept in which continuous layers are replaced by quasi-continuous crystal arrays to lead to dramatically improved physical properties.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Nature Publishing Group
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject
Semiconductors
en_US
dc.subject
Imaging techniques
en_US
dc.subject
Electronic devices
en_US
dc.subject
Characterization and analytical techniques
en_US
dc.title
Perfect crystals grown from imperfect interfaces
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported
ethz.journal.title
Scientific Reports
ethz.journal.volume
3
en_US
ethz.pages.start
2276
en_US
ethz.size
6 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
006751867
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-10T20:07:49Z
ethz.source
ECIT
ethz.identifier.importid
imp593650e223f3d85721
ethz.ecitpid
pub:111646
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-13T18:05:53Z
ethz.rosetta.lastUpdated
2019-01-02T13:44:42Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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