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dc.contributor.author
Gaulke, Marco
dc.contributor.author
Schuchter, Maximilian C.
dc.contributor.author
Huwyler, Nicolas
dc.contributor.author
Golling, Matthias
dc.contributor.author
Willenberg, Benjamin
dc.contributor.author
Phillips, Christopher R.
dc.contributor.author
Keller, Ursula
dc.date.accessioned
2024-11-25T15:48:19Z
dc.date.available
2024-11-25T15:14:31Z
dc.date.available
2024-11-25T15:48:19Z
dc.date.issued
2024-11-25
dc.identifier.uri
http://hdl.handle.net/20.500.11850/707043
dc.identifier.doi
10.3929/ethz-b-000707043
dc.description.abstract
Vertical emitting optically pumped semiconductor laser technology in the GaSb material system, operating in the short-wave infrared (SWIR) regime, has made significant advance- ments recently. This paper reviews the key achievements leading to the first demonstration of a passively modelocked optically pumped thin-disk semiconductor laser, where both the saturable absorber and the gain quantum wells are integrated into a single semicon- ductor chip, known as the Modelocked Integrated eXternal-cavity Surface Emitting Laser (MIXSEL). This GaSb-based MIXSEL operates at a center wavelength of 2 µm, supporting both single and dual-comb operations, with an average output power of 30 to 50 mW, pulse repetition rates of approximately 4 GHz, and picosecond pulse durations. It enables initial proof-of-principle dual-comb spectroscopy measurements. For this, we optimized continuous wave (cw) Vertical External Cavity Surface Emitting Laser (VECSEL) operation at 2 µm without an intracavity heat- spreader, enhanced group delay dispersion (GDD) compensation, and introduced an additional pump mirror integration. Compared to previous results, we achieved a significant performance increase with pump-DBR 2-µm VECSEL with an average output power of 6 W, an optical pump efficiency of 30% and a reduced thermal resistance of 1.9 K/W. Additionally, the better GDD compensation improved modelocking at 2 µm with a SESAM (Semiconductor Saturable Absorber Mirror), producing near-transform-limited femtosecond pulses with a duration of 331 fs, an average power of 30 mW at a pulse repetition rate of 2.77 GHz. Successful integration of the saturable absorber within the MIXSEL chip required matching of the cavity mode sizes on both the SESAM and the VECSEL chip. This paper details the optimization pro- cesses and resulting performance enhancements that mark a sig- nificant milestone in the development of GaSb-based thin disk laser technology.
en_US
dc.format
text/plain
en_US
dc.publisher
ETH Zurich
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Dual-comb generation, GaSb, MIXSEL, mode- locking, optically pumped semiconductor laser, SESAM, short- wave-infrared lasers, VECSEL.
en_US
dc.title
Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 μm
en_US
dc.type
Dataset
dc.rights.license
Creative Commons Attribution 4.0 International
ethz.size
14.40 MB
en_US
ethz.grant
Mid-infrared optical dual-comb generation and spectroscopy with one unstabilized semiconductor laser
en_US
ethz.publication.place
Zurich
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.date.retentionend
10 years
en_US
ethz.date.retentionendDate
2034-11-25T15:48:19Z
ethz.grant.agreementno
787097
ethz.grant.fundername
EC
ethz.grant.funderDoi
10.13039/501100000780
ethz.grant.program
H2020
ethz.relation.isSupplementTo
10.3929/ethz-b-000702022
ethz.date.deposited
2024-11-25T15:14:32Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2024-11-25T15:48:24Z
ethz.rosetta.lastUpdated
2024-11-25T15:48:24Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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