Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 μm
dc.contributor.author
Gaulke, Marco
dc.contributor.author
Schuchter, Maximilian C.
dc.contributor.author
Huwyler, Nicolas
dc.contributor.author
Golling, Matthias
dc.contributor.author
Willenberg, Benjamin
dc.contributor.author
Phillips, Christopher R.
dc.contributor.author
Keller, Ursula
dc.date.accessioned
2024-11-25T15:48:19Z
dc.date.available
2024-11-25T15:14:31Z
dc.date.available
2024-11-25T15:48:19Z
dc.date.issued
2024-11-25
dc.identifier.uri
http://hdl.handle.net/20.500.11850/707043
dc.identifier.doi
10.3929/ethz-b-000707043
dc.description.abstract
Vertical emitting optically pumped semiconductor
laser technology in the GaSb material system, operating in the
short-wave infrared (SWIR) regime, has made significant advance-
ments recently. This paper reviews the key achievements leading to
the first demonstration of a passively modelocked optically pumped
thin-disk semiconductor laser, where both the saturable absorber
and the gain quantum wells are integrated into a single semicon-
ductor chip, known as the Modelocked Integrated eXternal-cavity
Surface Emitting Laser (MIXSEL). This GaSb-based MIXSEL
operates at a center wavelength of 2 µm, supporting both single
and dual-comb operations, with an average output power of 30
to 50 mW, pulse repetition rates of approximately 4 GHz, and
picosecond pulse durations. It enables initial proof-of-principle
dual-comb spectroscopy measurements. For this, we optimized
continuous wave (cw) Vertical External Cavity Surface Emitting
Laser (VECSEL) operation at 2 µm without an intracavity heat-
spreader, enhanced group delay dispersion (GDD) compensation,
and introduced an additional pump mirror integration. Compared
to previous results, we achieved a significant performance increase
with pump-DBR 2-µm VECSEL with an average output power of
6 W, an optical pump efficiency of 30% and a reduced thermal
resistance of 1.9 K/W. Additionally, the better GDD compensation
improved modelocking at 2 µm with a SESAM (Semiconductor
Saturable Absorber Mirror), producing near-transform-limited
femtosecond pulses with a duration of 331 fs, an average power
of 30 mW at a pulse repetition rate of 2.77 GHz. Successful
integration of the saturable absorber within the MIXSEL chip
required matching of the cavity mode sizes on both the SESAM
and the VECSEL chip. This paper details the optimization pro-
cesses and resulting performance enhancements that mark a sig-
nificant milestone in the development of GaSb-based thin disk laser
technology.
en_US
dc.format
text/plain
en_US
dc.publisher
ETH Zurich
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Dual-comb generation, GaSb, MIXSEL, mode- locking, optically pumped semiconductor laser, SESAM, short- wave-infrared lasers, VECSEL.
en_US
dc.title
Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 μm
en_US
dc.type
Dataset
dc.rights.license
Creative Commons Attribution 4.0 International
ethz.size
14.40 MB
en_US
ethz.grant
Mid-infrared optical dual-comb generation and spectroscopy with one unstabilized semiconductor laser
en_US
ethz.publication.place
Zurich
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.date.retentionend
10 years
en_US
ethz.date.retentionendDate
2034-11-25T15:48:19Z
ethz.grant.agreementno
787097
ethz.grant.fundername
EC
ethz.grant.funderDoi
10.13039/501100000780
ethz.grant.program
H2020
ethz.relation.isSupplementTo
10.3929/ethz-b-000702022
ethz.date.deposited
2024-11-25T15:14:32Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2024-11-25T15:48:24Z
ethz.rosetta.lastUpdated
2024-11-25T15:48:24Z
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true
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true
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