Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
dc.contributor.author
Kube, R.
dc.contributor.author
Bracht, H.
dc.contributor.author
Hüger, E.
dc.contributor.author
Schmidt, H.
dc.contributor.author
Hansen, J. Lundsgaard
dc.contributor.author
Larsen, A. Nylandsted
dc.contributor.author
Ager, J. W.
dc.contributor.author
Haller, E. E.
dc.contributor.author
Geue, T.
dc.contributor.author
Stahn, J.
dc.date.accessioned
2017-06-10T20:44:41Z
dc.date.available
2017-06-10T20:44:41Z
dc.date.issued
2013-08-15
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.issn
2469-9950
dc.identifier.other
10.1103/PhysRevB.88.085206
dc.identifier.uri
http://hdl.handle.net/20.500.11850/71077
dc.language.iso
en
dc.publisher
American Physical Society
dc.title
Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
dc.type
Journal Article
ethz.journal.title
Physical Review B
ethz.journal.volume
88
ethz.journal.issue
8
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
085206
ethz.size
12 p.
ethz.notes
Received 24 May 2013.
ethz.identifier.wos
ethz.publication.place
Ridge, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-10T20:46:45Z
ethz.source
ECIT
ethz.identifier.importid
imp593650eed545391245
ethz.ecitpid
pub:112661
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T15:33:25Z
ethz.rosetta.lastUpdated
2024-02-01T20:48:52Z
ethz.rosetta.versionExported
true
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