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dc.contributor.author
Prokscha, Thomas
dc.contributor.author
Chow, Kim H.
dc.contributor.author
Stilp, Evelyn
dc.contributor.author
Suter, Andreas
dc.contributor.author
Luetkens, Hubertus
dc.contributor.author
Morenzoni, Elvezio
dc.contributor.author
Nieuwenhuys, Gerard J.
dc.contributor.author
Salman, Zaher
dc.contributor.author
Scheuermann, Robert
dc.date.accessioned
2018-09-05T10:00:11Z
dc.date.available
2017-06-10T21:11:47Z
dc.date.available
2018-09-05T09:59:24Z
dc.date.available
2018-09-05T10:00:11Z
dc.date.issued
2013-09-02
dc.identifier.issn
2045-2322
dc.identifier.other
10.1038/srep02569
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/71560
dc.identifier.doi
10.3929/ethz-b-000071560
dc.description.abstract
The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a persistent inversion from n- to p-type in a 200-nm-thick surface layer of a germanium wafer by illumination with white and blue light. We induce the inversion with a half-life of ~12 hours at a temperature of 220 K which disappears above 280 K. The photo-induced inversion is absent for a sample with a 20-nm-thick gold capping layer providing a Schottky barrier at the interface. This indicates that charge accumulation at the surface is essential to explain the observed inversion. The contactless change of carrier concentration is potentially interesting for device applications in opto-electronics where the gate electrode and gate oxide could be replaced by the semiconductor surface.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Nature Publishing Group
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject
Condensed-matter physics
en_US
dc.subject
Materials science
en_US
dc.subject
Semiconductors
en_US
dc.subject
Surfaces, interfaces and thin films
en_US
dc.title
Photo-induced persistent inversion of germanium in a 200-nm-deep surface region
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported
ethz.journal.title
Scientific Reports
ethz.journal.volume
3
en_US
ethz.journal.abbreviated
Sci Rep
ethz.pages.start
2569
en_US
ethz.size
6 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
006751867
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-10T21:13:36Z
ethz.source
ECIT
ethz.identifier.importid
imp593650fa13bec18973
ethz.ecitpid
pub:113448
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-20T15:25:27Z
ethz.rosetta.lastUpdated
2019-01-02T13:43:53Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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