Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
Abstract
We determine the optical losses in gate-induced charge accumulation/ inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm. Show more
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https://doi.org/10.3929/ethz-b-000071826Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
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