Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones
Two-level fluctuator stability
Metadata only
Date
2008Type
- Journal Article
Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsNotes
Received 3 March 2008, Accepted 22 April 2008, Published online 7 August 2008.More
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