Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones
Zimmerman, Neil M.
Huber, William H.
Keller, Mark W.
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
NotesReceived 3 March 2008, Accepted 22 April 2008, Published online 7 August 2008.
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