Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Mani, Ramesh G.
- Journal Article
Rights / licenseCreative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a “bell-shape” negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed “non-ohmic” size-dependent negative GMR. Show more
Journal / seriesScientific Reports
Pages / Article No.
PublisherNature Publishing Group
SubjectTwo-dimensional materials; Electronic properties and materials; Electronic and spintronic devices; Quantum Hall
Organisational unit03833 - Wegscheider, Werner / Wegscheider, Werner
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