The effect of dislocations on the efficiency of InGaN/GaN solar cells
dc.contributor.author
Zhang, Y.
dc.contributor.author
Kappers, M. J.
dc.contributor.author
Zhu, D.
dc.contributor.author
Oehler, F.
dc.contributor.author
Gao, F.
dc.contributor.author
Humphreys, C. J.
dc.date.accessioned
2017-06-10T22:58:23Z
dc.date.available
2017-06-10T22:58:23Z
dc.date.issued
2013-10
dc.identifier.issn
0927-0248
dc.identifier.issn
1879-3398
dc.identifier.other
10.1016/j.solmat.2013.06.022
dc.identifier.uri
http://hdl.handle.net/20.500.11850/73471
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
GaN
dc.subject
InGaN
dc.subject
TEM characterization
dc.subject
EQE
dc.subject
Defects
dc.title
The effect of dislocations on the efficiency of InGaN/GaN solar cells
dc.type
Journal Article
ethz.journal.title
Solar Energy Materials and Solar Cells
ethz.journal.volume
117
ethz.journal.abbreviated
Sol. Energy Mater. Sol. Cells
ethz.pages.start
279
ethz.pages.end
284
ethz.identifier.wos
ethz.identifier.nebis
000627053
ethz.publication.place
Amsterdam
ethz.publication.status
published
ethz.date.deposited
2017-06-10T23:02:16Z
ethz.source
ECIT
ethz.identifier.importid
imp5936511c59fb083437
ethz.ecitpid
pub:116388
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T17:04:02Z
ethz.rosetta.lastUpdated
2023-02-06T12:05:27Z
ethz.rosetta.versionExported
true
ethz.COinS
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Journal Article [133490]