Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
- Journal Article
We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. © 2013 American Physical Society. Show more
Journal / seriesPhysical Review Letters
Pages / Article No.
PublisherAmerican Physical Society
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