Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
dc.contributor.author
Barfuss, Anne
dc.contributor.author
Dudy, Lenart
dc.contributor.author
Scholz, Markus R.
dc.contributor.author
Roth, H.
dc.contributor.author
Höpfner, Philipp
dc.contributor.author
Blumenstein, Christian
dc.contributor.author
Landolt, Gabriel
dc.contributor.author
Dil, Jan H.
dc.contributor.author
Plumb, Nicholas C.
dc.contributor.author
Radovic, Milan
dc.contributor.author
Bostwick, Aaron A.
dc.contributor.author
Rotenberg, Eli
dc.contributor.author
Fleszar, Andrzej
dc.contributor.author
Bihlmayer, Gustav
dc.contributor.author
Wortmann, Daniel
dc.contributor.author
Li, Gang
dc.contributor.author
Hanke, Werner
dc.contributor.author
Claessen, Ralph
dc.contributor.author
Schäfer, Jörg
dc.date.accessioned
2020-07-10T13:30:46Z
dc.date.available
2017-06-10T23:45:04Z
dc.date.available
2020-07-10T13:30:46Z
dc.date.issued
2013-10-11
dc.identifier.issn
0031-9007
dc.identifier.issn
1079-7114
dc.identifier.other
10.1103/PhysRevLett.111.157205
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/74312
dc.description.abstract
We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. © 2013 American Physical Society.
en_US
dc.language.iso
en
en_US
dc.publisher
American Physical Society
en_US
dc.title
Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
en_US
dc.type
Journal Article
ethz.journal.title
Physical Review Letters
ethz.journal.volume
111
en_US
ethz.journal.issue
15
en_US
ethz.journal.abbreviated
Phys. Rev. Lett.
ethz.pages.start
157205
en_US
ethz.size
5 p.
en_US
ethz.identifier.wos
ethz.publication.place
New York, NY
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-10T23:45:52Z
ethz.source
ECIT
ethz.identifier.importid
imp5936512d8815a29701
ethz.ecitpid
pub:117557
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-12T11:20:42Z
ethz.rosetta.lastUpdated
2024-02-02T11:24:35Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Elemental%20Topological%20Insulator%20with%20Tunable%20Fermi%20Level:%20Strained%20%CE%B1-Sn%20on%20InSb(001)&rft.jtitle=Physical%20Review%20Letters&rft.date=2013-10-11&rft.volume=111&rft.issue=15&rft.spage=157205&rft.issn=0031-9007&1079-7114&rft.au=Barfuss,%20Anne&Dudy,%20Lenart&Scholz,%20Markus%20R.&Roth,%20H.&H%C3%B6pfner,%20Philipp&rft.genre=article&rft_id=info:doi/10.1103/PhysRevLett.111.157205&
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Journal Article [133584]