Kendirlik, Enver M.
Kalkan, Sirri B.
- Journal Article
Rights / licenseCreative Commons Attribution 3.0 Unported
In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels. Show more
Journal / seriesScientific Reports
Pages / Article No.
PublisherNature Publishing Group
SubjectSemiconductors; Quantum Hall; Electronic properties and materials; Electronic and spintronic devices
Organisational unit03833 - Wegscheider, Werner / Wegscheider, Werner
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