Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector
Metadata only
Datum
2014-01Typ
- Journal Article
Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Physica Status Solidi ABand
Seiten / Artikelnummer
Verlag
WileyThema
Epitaxial growth; Electrical properties; Ge; Monolithic integration; Patterned Si substrate; X-ray detectorOrganisationseinheit
03569 - Batlogg, Bertram (emeritus)
Anmerkungen
Manuscript received 29 May 2013, Manuscript revised 18 October 2013, Manuscript accepted 31 October 2013, Article first published online 29 November 2013, Issue published online 21 January 2014.